Nanotechnology for Electronic Materials and DevicesAnatoli Korkin, Evgeni Gusev, Jan K. Labanowski, Serge Luryi Springer Science & Business Media, 7 maj 2010 - 368 sidor The high level of attention and interest of the global community to NANO science and technology to a large extent is linked to the GIGAntic challenges for the c- tinuing growth of information technology, which sparked an unprecedented level of interdisciplinary and international cooperation among industrial and academic researchers, companies, IT market rivals, and countries, including former political and military rivals . Microelectronics technologies have reached a new stage in their development: The latest miniaturization of electronic devices is approaching atomic dimensions, interconnect bottlenecks are limiting circuit speeds, new ma- rials are being introduced into microelectronics manufacture at an unprecedented rate , and alternative technologies to mainstream complementary metal-oxide sem- conductors (CMOSs) are being considered . The very dynamic stage of science and technology related to the advanced and future electronics and photonics creates a growing gap between the large number of rapid publications and nanotechnology highlights in media on one side and fundamental understanding of underlying phenomena and an adequate evaluation of scientific discoveries and technological innovations on the other side. Writing a tutorial book on fundamentals of science and technology for electronics at this time is almost the same level of challenge as writing a history book during a revolution. |
Innehåll
| 1 | |
2 From SOI Basics to NanoSize MOSFETs | 67 |
3 Strategies of Nanoscale Semiconductor Lasers | 105 |
4 Silicon Nanocrystal Nonvolatile Memory | 171 |
5 Novel Dielectric Materials for Future Transistor Generations | 199 |
6 Scanning Force Microscopies for Imaging and Characterization of Nanastructured Materials | 223 |
From Atoms to Architecture | 257 |
8 Lattice Polarons and Switching in Molecular Nanowires and Quantum Dots | 305 |
| 357 | |
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Nanotechnology for Electronic Materials and Devices Anatoli Korkin,Evgeni Gusev,Jan K. Labanowski,Serge Luryi Ingen förhandsgranskning - 2006 |
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Appl atomistic atoms band gap bias bipolarons cantilever carrier cavity cell channel characteristics charge Chem chemical circuits conduction band confinement constant Coulomb Cristoloveanu crystal density deposition device dielectric dopant doping drain current e-ph effects electric electrostatic emission epitaxial equation erase etching fabrication FIGURE film FinFET frequency function GaAs gate stack growth HfO2 high-k increase integration interaction interface inversion lasing lasing threshold lattice layer Lett lithography materials measurement metal microelectronics microscopic mobility mode molecules MOSFETs MQDs nanocrystal nanoscale nanowires operation optical optical cavity oxide oxide thickness p-n junction parameter photon Phys polaron potential quantum dots quantum wire quantum wire laser random redox sample scaling scanning semiconductor lasers shown in Fig silicon simulations SiO2 structure substrate surface switching temperature thermal threshold voltage transconductance transistor traps tunnel oxide valence band variation wafer wavelength