Quantum Dot Lasers
Oxford University Press, 2003 - 290 sidor
The book addresses issues associated with physics and technology of injection lasers based on self-organized quantum dots. Fundamental and technological aspects of quantum dot edge-emitting lasers and VCSELs, their current status and future prospects are summarized and reviewed. Basic principles of QD formation using self-organization phenomena are reviewed. Structural and optical properties of self-organized QDs are considered with a number of examples in different material systems. Recent achievements in controlling the QD properties including the effects of vertical stacking, changing the matrix bandgap and the surface density of QDs are reviewed. The authors focus on the use of self-organized quantum dots in laser structures, fabrication and characterization of edge and surface emitting diode lasers, their properties and optimization with special attention paid to the relationship between structural and electronic properties of QDs and laser characteristics. The threshold and power characteristics of the state-of-the-art QD lasers are demonstrated. Issues related to the long-wavelength (1.3-mm) lasers on a GaAs substrate are also addressed and recent results on InGaAsN-based diode lasers presented for the purpose of comparison.
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Optical gain and threshold characteristics of a selforganized
Quantumdot edgeemitting lasers
Longwavelength emitters on GaAs
Power characteristics of quantum dot lasers
Quantum dot verticalcavity surfaceemitting lasers
achieved active region Alferov Appl applications band bandgap Bimberg carrier cavity length characteristics compared confinement conversion efficiency corresponding decreases demonstrated dependence deposition device differential efficiency diode diode lasers effect efficiency electron emission emitting energy epitaxial et al excited fabrication facets formation formed function GaAs gain ground grown growth higher improved InAs increase InGaAs intensity internal loss islands lasing layer Ledentsov Lett light limited localization long-wavelength loss lower material matrix maximum measured microcavity mirror mode observed operation optical optical gain output power oxidized parameters peak percent Phys planes position possible QD array QD lasers QD VCSELs quantum dots range recombination reflectivity respectively saturated self-organized semiconductor shown shows spectra strained structures substrate surface density temperature thickness threshold current density transition transparency current typical Ustinov waveguide wavelength width Zhukov