Quantum Dot Lasers
Victor Mikhailovich Ustinov, Alexey E. Zhokov, Alexey E. Zhukov, Anton Yu. Egorov, Nikolai A. Maleev
Oxford University Press, 2003 - 290 sidor
The book addresses issues associated with physics and technology of injection lasers based on self-organized quantum dots. Fundamental and technological aspects of quantum dot edge-emitting lasers and VCSELs, their current status and future prospects are summarized and reviewed. Thetheoretically predicted advantages of an ideal QD array for laser applications are discussed. Basic principles of QD formation using self-organization phenomena are reviewed. Structural and optical properties of self-organized QDs are considered with a number of examples in different materialsystems. Recent achievements in controlling the QD properties including the effects of vertical stacking, changing the matrix bandgap and the surface density of QDs are reviewed. The authors focus on the use of self-organized quantum dots in laser structures, fabrication and characterization ofedge- and surface-emitting diode lasers, their properties and optimization with special attention paid to the relationship between structural and electronic properties of QDs and laser characteristics. The threshold and power characteristics of the state-of-the-art QD lasers are demonstrated. Issuesrelated to the long-wavelength (1.3-mm) lasers on a GaAs substrate are also addressed and recent results on InGaAsN-based diode lasers presented for the purpose of comparison.
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Fabrication techniques and methods for semiconductor quantum dots
Structural and electronic properties of selforganized quantum dots
Optical gain and threshold characteristics of a selforganized
Quantumdot edgeemiuing lasers
Longwavelength emirters on GaAs
achieved active region ahout ahove Alferov AlGaAs Appl Phys band bandgap Bimherg carrier cavity length characteristics conversion efficiency DBRs density of QDs deposition device differential efficiency diode lasers electron emission emiuing energy epitaxial excited facets fahrication fiher formation GaAs GaAs matrix GaAs substrate GaAsN heam hecause hecomes heen heterostructures hetween hoth InAlAs InAs QDs increase InGaAs InGaAs QDs InGaAs quantum InGaAsN InGaN inhomogeneous hroadening internal loss islands laser diodes lasers based lasing wavelength lauice Ledentsov long-wavelength material maximum microcavity optical gain optical loss output power parameters peak percent Photon QD active QD array QD laser QD planes QD VCSELs quantum dot lasers quantum well lasers quantum wires recombination refractive index room temperature saturated gain self-organized QDs semiconductor shown in Fig slope efficiency strain surface density thermal thickness threshold current density transition transparency current density Ustinov valence band waveguide wavelength width Zh.I Zhukov